Up to Up to High Performance 40 DIP Direct Memory Access 5 Volt Logic 500 Thousand 200 nanosecond Dynamic Memory Operations Per Second 3 General Purpose Registers Next Generation NMOS Technology 56 In

Up to
Up to
High Performance
40 DIP
Direct Memory Access
5 Volt Logic
500 Thousand
200 nanosecond Dynamic Memory
Operations Per Second
3 General Purpose Registers
Next Generation
NMOS Technology
56 Instruction
From 1 to3
MHz
(всо) (Nui)
RISC
Math Operations
2 Interrupt Priorities
8-bit
16-bit
Over
Data BUS
Address BUS
3,200
Industry Leading
ALU
IMB per second
Transistors on Fabrication Process
Price for Performance
With Carry
Memory Bandwidth